发明名称 A PASSIVE MATRIX-ADDRESSABLE MEMORY APPARATUS
摘要 A passive matrix-addressable memory apparatus is provided to continually maintain the data state of memory cell by minimizing the interference. A memory device comprises the first electrode line(210), the second electrode line(220), a memory unit(100), and switches(310,320,330). The first electrode line is arranged to be parallel each other. The second electrode lines are arranged to intersect the first electrode lines. The memory unit is arranged between first electrode lines and the second electrode lines. The memory unit has the material which electrically can polarize while having the hysteresis. The switch is arranged between the first electrode lines and the memory unit. The switch is electrically connected to the first electrodes and the memory unit. The first electrodes are electrically connected to the first electrode lines while having the cantilever form. The switch has the second electrodes facing the first electrodes.
申请公布号 KR100913424(B1) 申请公布日期 2009.08.21
申请号 KR20080063307 申请日期 2008.07.01
申请人 KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 LEE, HEE CHUL;KIM, WOO YOUNG;HWANG, CHI HO;LEE, YONG SOO;KIM, SANG YOUL;KA, DU YOUN
分类号 G11C11/22 主分类号 G11C11/22
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