| 摘要 |
PROBLEM TO BE SOLVED: To provide a fabrication process of a semiconductor device which can fabricate a semiconductor device having excellent characteristics while limiting increase in fabrication cost. SOLUTION: A fabrication process of a semiconductor device performs a step (S20) for preparing a drift layer having anisotropy in oxidation rate such that a surface of relatively low oxidation rate serves as a major surface, a step (S30) for forming a mesa structure portion for use as a mask on the major surface of the drift layer, and a step (S40) for implanting conductive impurities in the major surface of a semiconductor layer on which a mesa structure portion is formed. Furthermore, the fabrication process of a semiconductor device performs a step (S50) for forming an oxide film thicker than an oxide film on the upper surface of the mesa structure portion on the side surface of the mesa structure portion by oxidizing the major surface of the drift layer, a step (S60) for removing the oxide film on the side surface of the mesa structure portion, and a step (S70) for implanting conductive impurities in the major surface of the drift layer by using the mesa structure portion from which the oxide film is removed as a mask. COPYRIGHT: (C)2009,JPO&INPIT
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