发明名称 METHOD FOR FORMING SILICA FILM
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a dense silica film by a simple operation without thermally affecting a substrate in a short time. SOLUTION: The problems can be solved by using a method for forming a silica film 4 which is characterized by comprising a step of forming a polysilazane containing film 3 on the surface 1a of a substrate 1 and a step of converting the polysilazane containing film 3 into a silica film 4 by spraying a carrier gas P which has passed through an atmospheric pressure plasma region. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009184865(A) 申请公布日期 2009.08.20
申请号 JP20080025491 申请日期 2008.02.05
申请人 CONTAMINATION CONTROL SERVICE:KK 发明人 TERANAKA TOSHIO;HANAOKA KOJI;TANAKA TAKAHIRO;YAMAGUCHI MASUSHI;SHINDO TOYOHIKO
分类号 C01B33/12 主分类号 C01B33/12
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