发明名称 |
METHOD FOR FORMING SILICA FILM |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a dense silica film by a simple operation without thermally affecting a substrate in a short time. SOLUTION: The problems can be solved by using a method for forming a silica film 4 which is characterized by comprising a step of forming a polysilazane containing film 3 on the surface 1a of a substrate 1 and a step of converting the polysilazane containing film 3 into a silica film 4 by spraying a carrier gas P which has passed through an atmospheric pressure plasma region. COPYRIGHT: (C)2009,JPO&INPIT
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申请公布号 |
JP2009184865(A) |
申请公布日期 |
2009.08.20 |
申请号 |
JP20080025491 |
申请日期 |
2008.02.05 |
申请人 |
CONTAMINATION CONTROL SERVICE:KK |
发明人 |
TERANAKA TOSHIO;HANAOKA KOJI;TANAKA TAKAHIRO;YAMAGUCHI MASUSHI;SHINDO TOYOHIKO |
分类号 |
C01B33/12 |
主分类号 |
C01B33/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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