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发明名称
Silicon Dioxide Thin Films by ALD
摘要
Methods are provided for depositing silicon dioxide containing thin films on a substrate by atomic layer deposition ALD. By using disilane compounds as the silicon source, good deposition rates and uniformity are obtained.
申请公布号
US2009209081(A1)
申请公布日期
2009.08.20
申请号
US20080340551
申请日期
2008.12.19
申请人
ASM INTERNATIONAL N.V.
发明人
MATERO RAIJA H.;HAUKKA SUVI P.
分类号
H01L21/762;H01L21/316
主分类号
H01L21/762
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