发明名称 Silicon Dioxide Thin Films by ALD
摘要 Methods are provided for depositing silicon dioxide containing thin films on a substrate by atomic layer deposition ALD. By using disilane compounds as the silicon source, good deposition rates and uniformity are obtained.
申请公布号 US2009209081(A1) 申请公布日期 2009.08.20
申请号 US20080340551 申请日期 2008.12.19
申请人 ASM INTERNATIONAL N.V. 发明人 MATERO RAIJA H.;HAUKKA SUVI P.
分类号 H01L21/762;H01L21/316 主分类号 H01L21/762
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