| 摘要 |
A film deposition apparatus includes: a direct current power source; a metal target coupled to the direct current power source; a dielectric frame arranged to surround a periphery of the metal target; an electrode arranged at a back side of the metal target; and a magnetic field generator arranged at a back side of the metal target as well as of the dielectric frame. In the apparatus, at least part of the magnetic field generator is arranged to follow the dielectric frame, and the film deposition apparatus employs reactive direct current sputtering.
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