发明名称 Method for Fabricating a Semiconductor Component With a Specifically Doped Surface Region Using Out-Diffusion, and Corresponding Semiconductor Component
摘要 The invention proposes a method for producing a semiconductor component, such as a thin-layer solar cell. The method involves providing a doped semiconductor carrier substrate (1), producing a separating layer (2), for example a porous layer, on one surface of the semiconductor carrier substrate, depositing a doped semiconductor layer (3) over the separating layer and detaching the deposited semiconductor layer from the semiconductor carrier substrate. In line with the invention, process parameters such as the process temperature and time are chosen during the manufacturing process such that dopants can diffuse from the separation layer into the deposited semiconductor layer in order to form a specifically doped surface area (4). Specific use of solid-state diffusion makes it possible to simplify the manufacturing process over conventional fabrication methods in this manner.
申请公布号 US2009205705(A1) 申请公布日期 2009.08.20
申请号 US20070225505 申请日期 2007.03.20
申请人 INSTITUT FUR SOLARENERGIEFORSCHUNG (ISFH) 发明人 BRENDEL ROLF;TERHEIDEN BARBARA;WOLF ANDREAS
分类号 H01L31/04;H01L21/20;H01L29/36 主分类号 H01L31/04
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