MAGNETIC MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A magnetic memory device including a high magnetic resistance and a low switching current and a manufacturing method thereof are provided to increase the density of a switching current regardless of the change of the current quantity supplied to a GMR device by forming a current limit pattern in the GMR(Giant Magneto-Resistance) device. A write element changes a magnetization direction of a free layer. The write element includes a nonmagnetic metal film, an electric current confining film, an upper pinned layer, and an upper pinning layer. The width of the electric current confining film is smaller than the minimum width of the free layer. A read element senses the magnetization direction of the free layer. The read element includes a lower pinning layer(110), a lower pinned layer(120), and a tunnel insulating layer(130). The read element and the free layer comprise a TMR(Tunneling Magneto-Resistance) device. The write element and the free layer comprise the GMR device.