SEMICONDUCTOR DEVICE, ELECTROOPTICAL DEVICE, ELECTRONIC APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING ELECTROOPTICAL DEVICE AND METHOD OF MANUFACTURING ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide the configuration of a semiconductor device (array substrate) capable of attaining improvement in characteristics. SOLUTION: A semiconductor device includes a plurality of thin film transistors (T) formed on a base insulating film on a substrate. The plurality of thin film transistors include a plurality of semiconductor films (17) formed on the base insulating film (15) and a plurality of gate electrodes (G) formed on the plurality of semiconductor films via a gate insulating film (19), respectively, and the base insulating film is formed while being divided into areas each including at least one of the plurality of semiconductor films. The semiconductor device is thus configured so that, since the base insulating film is not formed all over the surface but divided into areas including the semiconductor films, the base insulating film can be reduced from being cracked, thereby improving characteristics of the thin film transistors formed in an upper portion thereof. Furthermore, device productivity can be improved. COPYRIGHT: (C)2009,JPO&INPIT