| 摘要 |
PROBLEM TO BE SOLVED: To provide a diamond single crystal substrate having a large area and high quality to be used for a semiconductor material, electronic parts, optical parts and the like. SOLUTION: A plurality of diamond single crystal substrates are prepared, in which all the substrates 1 except for one substrate have directions of crystal planes of the principal faces deviating by less than one degree from ä100} plane while the rest one substrate 2 has a direction of crystal plane of the principal face deviating by one or more degrees to not more than eight degrees from ä100} plane, and are arranged in such a manner that the one substrate 2 is laid in the outermost circumference part and the <100> direction of the principal face of the substrate 2 directs the outer circumference direction of the arranged substrates. Subsequently, diamond single crystals 7, 8 are grown by vapor-phase synthesis, allowing the diamond single crystal 8 grown from the one substrate 2 to cover the diamond single crystal 7 grown on other substrates 1 to form an integrated diamond single crystal substrate over the whole surface. COPYRIGHT: (C)2009,JPO&INPIT
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