发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND WET ETCHING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device that reduces the amount of side etching of wet etching processing while maintaining cleanness of a chemical, and a wet etching device. SOLUTION: Disclosed is the manufacturing method of the semiconductor device that has a chemical tank 30 for circulating the reserved chemical by a predetermined amount of circulation at processing standby time and includes a stage of dipping the semiconductor device 110 in the chemical tank to carry out wet etching processing, the manufacturing method of the semiconductor device being characterized in that before the semiconductor device 110 is dipped in the chemical tank 30, reduction control over the amount of chemical circulation is carried out to make the amount of chemical circulation less than the predetermined amount of circulation. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009188048(A) 申请公布日期 2009.08.20
申请号 JP20080024177 申请日期 2008.02.04
申请人 MITSUMI ELECTRIC CO LTD 发明人 TOKI KAZUHISA;SUGANUMA TAKAHIRO
分类号 H01L21/306 主分类号 H01L21/306
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