| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology for controlling the profile of etching rate while preventing generation of particles resulting from the fact that a treatment container is etched. SOLUTION: When a cleaning step (a) for removing matters adhering to the inside of a treatment container 2 with plasma obtained by turning a cleaning gas into plasma, a step (b) for depositing a CF film at a part in the treatment container exposed to plasma obtained by turning a film deposition gas containing carbon and fluorine into plasma, a step (c) for etching a wafer W mounted on a mounting table in the treatment container with plasma obtained by turning an etching gas into plasma, and a step (d) for taking out the wafer W from the treatment container after the etching step (c) are carried out, the steps (a)-(d) are carried out after ending the step (d). COPYRIGHT: (C)2009,JPO&INPIT
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