NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A nonvolatile memory device and a manufacturing method thereof are provided to improve reliability of a device by preventing concentration of an electron in interface between a charge trapping layer and a blocking layer during a programming or removing operation. A tunnel layer(110) is formed on a semiconductor substrate(100). A charge trapping layer(120) is formed on the tunnel layer. A first blocking layer(132) is formed on the charge trapping layer. A second blocking layer(134) is formed on the first blocking layer, and is made of material having a dielectric constant higher than the first blocking layer. A gate electrode is formed on the second blocking layer. A band gap of the first blocking layer is arranged in the gate electrode, and includes a source/drain region.