METHOD FOR FABRICATING A GALLIUM NITRIDE PATTERN AND METHOD FOR FABRICATING FLASH MEMORY DEVICE AND FLASH MEMORY DEVICE USING THEREOF

摘要

A method for manufacturing a GaN pattern, a flash memory device using the same, and a manufacturing method thereof are provided to manufacture a flash memory device of a micro type by using a nano rod arranged vertically with a substrate as a charge trapping layer. A substrate in which a tunneling insulation film is formed is loaded(S610). A GaN nano rod is formed on the substrate(S620). A gate insulation film is formed on the substrate in order to cover the GaN nano rod and the substrate(S630). A source region and a drain region are formed on the substrate of a bottom part of both sides of the tunneling insulation film(S640). A gate electrode, a source electrode, and a drain electrode are formed on the gate insulation film, the source region, and the drain region(S650).