摘要 |
Methods of making nanometer-scale semiconductor structures with controlled size are disclosed. Semiconductor structures (200, 300, 400, 500, 600. 700) that include one or ore nanowires (104, 204, 304, 404, 504, 604, 704) are also disclosed. The nanowires can include a passivation layer or have a hollow tube structure. |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.;KOBAYASHI, NOBUHIKO;WU, WEI;STEWART, DUNCAN;SHARMA, SHASHANK;WANG, SHIH-YUAN;WILLIAMS, R. STANLEY, |
发明人 |
KOBAYASHI, NOBUHIKO;WU, WEI;STEWART, DUNCAN;SHARMA, SHASHANK;WANG, SHIH-YUAN;WILLIAMS, R. STANLEY, |