发明名称 |
HIGH-FREQUENCY PLASMA PROCESSING APPARATUS AND METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a processing apparatus which surely conducts electric discharge for plasma with a simple structure even without preparing a new installation space. <P>SOLUTION: A high-frequency plasma processing method 10a includes generating the plasma between an external electrode 12 and an internal electrode (a source gas supply pipe) 13, and conducting predetermined processing in a plastic container. The processing apparatus has a member 20 for forming a facing portion free from the interposition of the plastic container provided in between the high frequency electrode 12 and the ground electrode 13. <P>COPYRIGHT: (C)2009,JPO&INPIT |
申请公布号 |
JP2009185330(A) |
申请公布日期 |
2009.08.20 |
申请号 |
JP20080025642 |
申请日期 |
2008.02.05 |
申请人 |
TOYO SEIKAN KAISHA LTD |
发明人 |
AIHARA TAKESHI;AOTANI MASATAKE;YAMADA KOJI |
分类号 |
C23C16/509;B65D23/02;H05H1/46 |
主分类号 |
C23C16/509 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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