发明名称 HIGH-FREQUENCY PLASMA PROCESSING APPARATUS AND METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a processing apparatus which surely conducts electric discharge for plasma with a simple structure even without preparing a new installation space. <P>SOLUTION: A high-frequency plasma processing method 10a includes generating the plasma between an external electrode 12 and an internal electrode (a source gas supply pipe) 13, and conducting predetermined processing in a plastic container. The processing apparatus has a member 20 for forming a facing portion free from the interposition of the plastic container provided in between the high frequency electrode 12 and the ground electrode 13. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009185330(A) 申请公布日期 2009.08.20
申请号 JP20080025642 申请日期 2008.02.05
申请人 TOYO SEIKAN KAISHA LTD 发明人 AIHARA TAKESHI;AOTANI MASATAKE;YAMADA KOJI
分类号 C23C16/509;B65D23/02;H05H1/46 主分类号 C23C16/509
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