发明名称 |
Edge Termination with Improved Breakdown Voltage |
摘要 |
A MOSFET switch which has a low surface electric field at an edge termination area, and also has increased breakdown voltage. The MOSFET switch has a new edge termination structure employing an N-P-N sandwich structure. The MOSFET switch also has a polysilicon field plate configuration operative to enhance any spreading of any depletion layer located at an edge of a main PN junction of the N-P-N sandwich structure.
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申请公布号 |
US2009206913(A1) |
申请公布日期 |
2009.08.20 |
申请号 |
US20090367716 |
申请日期 |
2009.02.09 |
申请人 |
MAXPOWER SEMICONDUCTOR INC. |
发明人 |
ZENG JUN;DARWISH MOHAMED N.;SU SHIH-TZUNG |
分类号 |
H03K3/01;H01L29/06 |
主分类号 |
H03K3/01 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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