发明名称 Solid state imaging device, manufacturing method of the same, and substrate for solid state imaging device
摘要 A method of manufacturing a solid state imaging device having photoelectric conversion devices, the method including: 1) forming a plurality of color filters differing in color from each other, 2) forming a transparent resin layer on the color filters, 3) forming an etching control layer on the transparent resin layer, the etching control layer being enabled to be etched at a different etching rate from the etching rate of the transparent resin layer, 4) forming a lens master on the etching control layer by using a heatflowable resin material, 5) transferring a pattern of the lens master to the etching control layer by dry etching to form an intermediate micro lens, and 6) transferring a pattern of the intermediate micro lens to the transparent resin layer by dry etching to form the transfer lenses.
申请公布号 US2009206435(A1) 申请公布日期 2009.08.20
申请号 US20090385969 申请日期 2009.04.24
申请人 TOPPAN PRINTING CO., LTD. 发明人 FUKUYOSHI KENZO;ISHIMATSU TADASHI;OGATA KEISUKE;NAKAO MITSUHIRO;USHIBORI AKIKO
分类号 H01L31/0232;H01L27/146 主分类号 H01L31/0232
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