| 摘要 |
In order to improve reliability, there are provided a step of forming lower electrode 60 above the surface of a passage forming substrate wafer 110 and a step of forming a piezoelectric layer 70 including a plurality of piezoelectric films 75 above the lower electrode 60 by repeatedly performing a process of forming piezoelectric film 75 in a manner of forming a piezoelectric precursor film and sintering the piezoelectric precursor film. In the step of forming the piezoelectric layer, a temperature of the piezoelectric film 75 is dropped at a temperature drop speed of 25° C./sec or less by 100° C. from a temperature at which the piezoelectric precursor film is sintered, after the piezoelectric precursor film is sintered.
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