| 摘要 |
A magneto-resistance effect element comprises; a magneto-resistance effect stack including an upper magnetic layer and a lower magnetic layer in which respective magnetization directions change in accordance with an external magnetic field, a non-magnetic intermediate layer sandwiched between the upper and lower magnetic layers, an upper gap adjustment layer and a lower gap adjustment layer provided at respective ends in the direction of stacking the magneto-resistance effect stack, an upper exchange coupling transmission layer configured to generate exchange coupling between the upper magnetic layer and the upper gap adjustment layer, and a lower exchange coupling transmission layer configured to generate exchange coupling between the lower magnetic layer and the lower gap adjustment layer; an upper shield electrode layer and a lower shield electrode layer which are provided to sandwich the magneto-resistance effect stack therebetween in the direction of stacking the magneto-resistance effect stack, wherein the upper shield electrode layer and the lower shield electrode layer supply sense current in the direction of stacking, and magnetically shield the magneto-resistance effect stack; and a bias magnetic layer which is provided on a surface of the magneto-resistance effect stack opposite to an air bearing surface, and wherein the bias magnetic layer applies a bias magnetic field to the upper and lower magnetic layers in a direction perpendicular to the air bearing surface, wherein the upper and lower shield electrode layers are each magnetized in a track width direction by a magnetization controller, and the upper and lower gap adjustment layers are composed of a material having a higher magnetic permeability and a lower saturation magnetic flux density than the upper and lower shield electrode layers respectively.
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