A plasma processing apparatus is provided to reduce a manufacturing cost by reducing the number of coupling members which fix an insulator. A gateway(112) is formed in one side of a process chamber(110), and performs carry-in and carry-out about a substrate in the process chamber. An inner part of the process chamber is hollow. A gate(114) opens and closes the gateway. A top electrode(116) is included in a top side inside the process chamber. A bottom electrode(120) is included in a bottom side inside the process chamber faced with the top electrode. A mounting stand in which the substrate is mounted is installed in the bottom electrode. An insulation member surrounds a circumference of an electrode. A coupling surface is formed in both sides of the insulation member. A coupling member couples a plurality of insulators with the coupling surface.
