SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

摘要

Provided is an SGT fabrication method for realizing a structure for lowering the resistance of the source, drain and gate, and for obtaining the desired gate length, source and drain shapes and diameter of the columnar semiconductor. Said objectives are realized by a semiconductor device fabrication method characterized by including a step for forming a columnar semiconductor layer of a first conductivity type, a step for forming a semiconductor layer of a second conductivity type at the base of the columnar semiconductor layer of the first conductivity type, a step for forming a gate insulating film and a gate electrode at the perimeter of the columnar semiconductor layer of the first conductivity type, a step for forming an insulating film on the upper part of the gate and on the side wall at the upper part of the columnar semiconductor layer of the first conductivity type, a step for forming an insulating film on the side wall of the gate, a step for forming a semiconductor layer of the second conductivity type on the upper part of the columnar semiconductor layer of the first conductivity type, and a step for forming a compound of a metal and a semiconductor on the semiconductor layers of the second conductivity type formed at the upper part and at the base of the columnar semiconductor layer of the first conductivity type and on the gate.