FABRICATION METHOD OF FERROELECTRIC SINGLE DOMAIN OF RBTIOASO4 SINGLE CRYSTALS

摘要

A manufacturing method of ferroelectric single domain of RTA(RbTiOAsO4) single crystal is provided to manufacture an RTA single crystal having a single domain in a whole crystal by relieving deformation generated in a phase transition process and a crystal growth through a temperature control. An RTA single crystal is manufactured by using a flux method. After a crystal growth is finished, the RTA single crystal is maintained at a temperature of 760~850‹C for 12~24 hours(S100). A temperature is decreased at a temperature of 700~800‹C(S200). The RTA single crystal is maintained at a temperature of 700‹C for 12~24 hours(S300). A temperature is decreased at a temperature of 350~700‹C. A process for increasing and decreasing the temperature is repeated with 3~100 times(S400).