| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent a write error into a memory cell caused by a noise when an operation mode is switched in a semiconductor device having a normal mode and a standby mode. <P>SOLUTION: When the standby mode is entered, a first transistor 11 is made conductive by a control signal WLPD, and a word line WL is fixed to a ground voltage VSS. Further, a second transistor 21 is made non-conductive and supply of an internal power source voltage VDD to a word line driver WD is interrupted. After that, the supply of the internal power source voltage VDD is stopped for saving the power. When the normal mode is restored, after the supply of the internal power source voltage VDD is started, the first transistor 11 is made non-conductive by the control signal WLPD and the second transistor 21 is made conductive. <P>COPYRIGHT: (C)2009,JPO&INPIT |
