| 摘要 |
PROBLEM TO BE SOLVED: To provide a silylation processing method which allows use of a compact silylation processing apparatus capable of reducing the processing cost and silylating a damaged portion of an inter-layer insulating film. SOLUTION: A substrate with an inter-layer insulating film which has a damaged portion damaged by at least one of etching processing, ashing processing, chemical treatment, and cleaning treatment is stored in a chamber 42 and is heated at a prescribed temperature, and then the chamber 42 is evacuated, and evacuating the chamber 42 is stopped when the inside of the chamber 42 reaches a prescribed degree of vacuum, and the inside of the chamber 42 is kept at a prescribed reduced atmospheric pressure, and vapor of a silylating agent or processing gas obtained by adding vapor of a prescribed amount of the silylating agent to inert gas is supplied into the chamber 42 and is dispersed in the chamber 42 approximately uniformly, whereby the damaged portion of the inter-layer insulating film is silylated. COPYRIGHT: (C)2009,JPO&INPIT
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