| 摘要 |
PROBLEM TO BE SOLVED: To provide a particle detecting method and a processing apparatus, which can enlarge the particle to make its detection easy. SOLUTION: A wafer W on which a first film 3 is formed in advance over a particle 2 attached on the wafer W is transferred to a plasma processing apparatus for applying an etching treatment to the wafer W. The first film 3 on the wafer W is etched back by the plasma processing device. Subsequently, the wafer W is etched through the first film 3 remaining on the vicinity of the particle 2 by the plasma processing apparatus. Then, protrusions having the first film 3 on the tops are formed. In a detection apparatus, the wafer W is irradiated with light by an irradiation means, and a light-receiving means receives scattered light emitted from the protrusions. Lastly, a detection means detects the protrusions based on the scattered light received by the light-receiving means. COPYRIGHT: (C)2009,JPO&INPIT
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