发明名称 METHOD FOR MANUFACTURING DIAMOND ELECTRON SOURCE AND DIAMOND ELECTRON SOURCE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a diamond electron source which forms with a sufficient controllability a spherical surface of a desirable top end shape for generating a large current/high focused electron beam and provide a diamond electron source. <P>SOLUTION: The method for manufacturing a diamond electron source which includes a top end portion as a diamond electron discharging point includes a process A in which a top end shape of the sharp top portion is rectified to a spherical surface by using a focused ion beam processing unit and a process B in which a process-damaged layer formed by the process A is removed by an acid solution. After the process A and the process B in the method for manufacturing the diamond electron source, the top end becomes a spherical surface of the diamond surface and as a result becomes an optimal diamond electron source for generating a large current/high focused electron beam and surpasses a conventional electron source in electron source performance such as an angle current density and luminance or the like. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009187923(A) 申请公布日期 2009.08.20
申请号 JP20080134997 申请日期 2008.05.23
申请人 SUMITOMO ELECTRIC IND LTD 发明人 UEDA AKIHIKO;YAMAMOTO YOSHIYUKI;NISHIBAYASHI YOSHIKI;IMAI TAKAHIRO
分类号 H01J9/02;H01J1/304;H01J37/073 主分类号 H01J9/02
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