发明名称 |
METHOD FOR MANUFACTURING DIAMOND ELECTRON SOURCE AND DIAMOND ELECTRON SOURCE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a diamond electron source which forms with a sufficient controllability a spherical surface of a desirable top end shape for generating a large current/high focused electron beam and provide a diamond electron source. <P>SOLUTION: The method for manufacturing a diamond electron source which includes a top end portion as a diamond electron discharging point includes a process A in which a top end shape of the sharp top portion is rectified to a spherical surface by using a focused ion beam processing unit and a process B in which a process-damaged layer formed by the process A is removed by an acid solution. After the process A and the process B in the method for manufacturing the diamond electron source, the top end becomes a spherical surface of the diamond surface and as a result becomes an optimal diamond electron source for generating a large current/high focused electron beam and surpasses a conventional electron source in electron source performance such as an angle current density and luminance or the like. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
申请公布号 |
JP2009187923(A) |
申请公布日期 |
2009.08.20 |
申请号 |
JP20080134997 |
申请日期 |
2008.05.23 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
UEDA AKIHIKO;YAMAMOTO YOSHIYUKI;NISHIBAYASHI YOSHIKI;IMAI TAKAHIRO |
分类号 |
H01J9/02;H01J1/304;H01J37/073 |
主分类号 |
H01J9/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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