发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device in which a film for oxidation prevention can be formed even on a side surface of a mounting-side terminal, by allowing a terminal surface of a substrate side mounting surface to be thickly plated using a material allowing cost reduction. <P>SOLUTION: A semiconductor element 11, a columnar terminal 14 which is arranged around the semiconductor element 11 in an area array form, and a bonding wire 16 which electrically connects an electrode pad 15 of the semiconductor element 11 and a wire bonding portion 12 of the columnar terminal 14 are included. The semiconductor element 11, the bonding wire 16, and a part of the columnar terminal 14 are sealed with a resin. The part of the each columnar terminal 14 is projected from a lower end of a sealing resin 17. The each columnar terminal 14 is formed with a half etching from a front side and a back side. Gold plating (or tin plating, tin alloy plating, or nickel plating) 23 is applied to the upper surface of the each columnar terminal 14. Tin plating (or tin alloy plating or nickel plating) 25 is applied to the lower surface of the each columnar terminal 14 projected from the sealing resin 17. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009187980(A) 申请公布日期 2009.08.20
申请号 JP20080023114 申请日期 2008.02.01
申请人 MITSUI HIGH TEC INC 发明人 MATSUNAGA KIYOSHI;MORI SHUJI
分类号 H01L23/50;H01L23/12 主分类号 H01L23/50
代理机构 代理人
主权项
地址