| 摘要 |
A method and apparatus for coating the inner walls of polymer-made wafer containers with a thin silicon dioxide barrier film, which is characterized by good washability and possesses high scratch-resistant and wear-resistant properties. In compliance with requirements of high purity, the barrier layer also protects the surfaces of semiconductor wafers from volatile substances of polymer material of the container walls. The apparatus comprises a base plate and an RF antenna unit that is inserted into the preliminarily sealed and evacuated container. The apparatus is connected to the front side of the container through a standard mechanical interface provided on the facing side of the apparatus. The barrier layer is deposited with the use of a plasma-enhanced chemical-vapor-deposition process as a result of a plasma-chemical reaction in a working gas comprising a mixture of silane with excess oxygen.
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