发明名称 |
Wafer und Waferschneid- und Teilungsverfahren |
摘要 |
<p>A laser beam is applied to an interior of a wafer through a top surface to form modified areas in a plurality of layers of modified area groups. Intervals of the modified areas in one of the layers of modified area groups differ from intervals of the modified areas in another one of the layers of the modified area groups, which is closer to the top surface of the wafer in comparison to the one of the layers of the modified area groups.</p> |
申请公布号 |
DE102006053895(B4) |
申请公布日期 |
2009.08.20 |
申请号 |
DE20061053895 |
申请日期 |
2006.11.15 |
申请人 |
DENSO CORPORATION |
发明人 |
TAMURA, MUNEO;OONIWA, HIROMI |
分类号 |
H01L21/301;B23K26/04;B23K26/40 |
主分类号 |
H01L21/301 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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