发明名称 DATA OUTPUT CIRUIT AND METHOD OF SEMICONDUCTOR MEMORY APPARATUS
摘要 A data output circuit of a semiconductor memory device and an output method thereof are provided to control a generation timing of a second pulse signal by generating a falling timing of an outer clock. An initializer(100) initializes a latch signal in response to a reset signal. If a reset signal is enabled, the initializer disables the latch signal. A pulse generation controller(500) includes an inverting unit(510), a buffer(520), and a latch unit(530). The inverting unit inverts a first pulse signal. The buffer unit buffers the clock. The latch unit outputs the latch signal in response to the first pulse signal and the clock. The latch signal is enabled at the rising timing of the clock and the first pulse signal and is disabled at the falling timing of the clock. A pulse generating unit(400) outputs the second pulse signal in response to the latch signal.
申请公布号 KR20090088472(A) 申请公布日期 2009.08.20
申请号 KR20080013749 申请日期 2008.02.15
申请人 HYNIX SEMICONDUCTOR INC. 发明人 YUN, JAE WOONG
分类号 G11C7/10;G11C7/20;G11C7/22 主分类号 G11C7/10
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