发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
<p>Provided is an SGT manufacturing method, wherein a metal is used for a gate electrode, a manufacturing step considering metal contamination is included, and a structure for reducing resistances of a source, a drain and a gate and desired gate length, source and drain shapes and diameter of a columnar semiconductor are obtained. The manufacturing method includes a step of forming a columnar semiconductor layer of a first conductivity type on a flat semiconductor layer; a step of forming a first semiconductor layer of a second conductivity type on the flat semiconductor layer; a step of forming, at the periphery of the semiconductor layer of the first conductivity type, a gate electrode composed of a gate insulating film and a metal; a step of forming a side-wall-like insulating film above the gate, on an upper side wall of the semiconductor layer of the first conductivity type, and on a side wall of the gate electrode; a step of forming a second semiconductor layer of the second conductivity type above the semiconductor layer of the first conductivity type; a step of forming a compound composed of a metal and a semiconductor on the first and the second semiconductor layers of the second conductivity type and on the gate electrode; and a step of forming a contact on the first and the second semiconductor layers of the second conductivity type.</p> |
申请公布号 |
WO2009102060(A1) |
申请公布日期 |
2009.08.20 |
申请号 |
WO2009JP52558 |
申请日期 |
2009.02.16 |
申请人 |
UNISANTIS ELECTRONICS (JAPAN) LTD.;MASUOKA, FUJIO;KUDO, TOMOHIKO;ARAI, SHINTARO;NAKAMURA, HIROKI |
发明人 |
MASUOKA, FUJIO;KUDO, TOMOHIKO;ARAI, SHINTARO;NAKAMURA, HIROKI |
分类号 |
H01L29/786;H01L21/28;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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