MULTI-BIT NONVOLATILE MEMORY DEVICE AND OPERATION METHOD OF THE DEVICE

摘要

A multi bit nonvolatile memory device and an operation method thereof are provided to reduce a programming error by storing information of two times. A semiconductor substrate(10) includes an active pin(10a). The active pin includes source/drain regions and a channel region(10ac) between the source/drain regions(10as,10ad). A first control gate(61) is positioned on a first side wall of the channel region. A second control gate(62) is positioned on a second side wall of the channel region, and is separated from the first control gate. A first charge storage pattern(41) is positioned between the first side wall and the first control gate. A second charge storage pattern(42) is positioned between the second side wall and the second control gate.