| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon carbide semiconductor device, capable of raising adhesiveness between an electrode and wiring when forming the wiring. SOLUTION: The method for manufacturing silicon carbide semiconductor device 100a includes: a process for preparing a silicon carbide semiconductor layer 110; a process for forming a metallic layer on the surface of the silicon carbide semiconductor layer 110; a process for forming the electrode 150 by thermally processing the metallic layer; and a process for performing etching to remove carbon on the surface of the electrode 150. In the process for forming the metallic layer, the metallic layer is formed, which is more reactive with silicon than carbon at temperature to thermally process the metallic layer. COPYRIGHT: (C)2009,JPO&INPIT
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