| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor heat dissipating substrate in which a low thermal expansion coefficient and a high thermal conductivity function with favorable balance by integrally molding an insulating board, a Si-Al composite material and a fin with diffused junction, and an adhesion degree between Si and Al can be enhanced by coating a surface of Si powder with Al powder, and the generation of distortion is suppressed by a notch, and a heat dissipating effect (cooling effect) is improved by a passage hole of the fin etc. SOLUTION: The semiconductor heat dissipating substrate is formed by integrally molding the insulating board of SiC, AlN etc., a composite material composed of the Si-Al composite material and the fin of an Al board with diffused junction. The Si of the Si-Al composite material is more than 50 vol% and less than 80 vol%. COPYRIGHT: (C)2009,JPO&INPIT
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