NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A nonvolatile semiconductor storage device (100) is provided with a substrate (102) having a transistor (101) formed thereon; a first interlayer insulating layer (103) formed on the substrate to cover the transistor; a first contact plug (104) or a second contact plug (105), which is formed on the first interlayer insulating layer and is electrically connected to a drain electrode (101a) or a source electrode (101b) of the transistor; a resistance variable layer (106) formed to cover at least a part of the first contact plug; a first wiring (107) formed on the resistance variable layer; and a second wiring (108) formed to cover at least a part of the second contact plug. An end surface of the resistance variable layer and an end surface of the first wiring are on the same surface.