| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an apparatus of measuring an energy level and a method of measuring an energy level capable of measuring difference between an energy level of a quantum dot and that of a semiconductor material and the like adjacent to the quantum dot without giving damage even if a sample has a low thermal resistance. <P>SOLUTION: Irradiated light of a light source 1 is swept by a spectroscope 3 to obtain a wavelengthλ1 of the irradiated light which gives a peak electrostatic capacitance value of a sample 100. Then, in a state of irradiating the irradiation light withλ1, the sample 100 is irradiated while sweeping the irradiated light of a light source 2 by a spectroscope 4 to obtain a wavelengthλ2 giving a peak current value. Difference between an energy level of a quantum dot included in the sample 100 and that in the bottom of the conductive band of an insulating layer close to or adjacent to the quantum dot is obtained as an irradiating energy E2 of the irradiation light with the wavelengthλ2 to enable to measure the energy level with accuracy. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
