| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device can manufacturing inexpensive chips by reducing the total length of a withstand voltage structure so that a forward reverse withstand voltage structural portion may have an optimum width from a view of a withstand voltage and reliability, and to provide a manufacturing method thereof. <P>SOLUTION: The semiconductor device includes a structure in which the forward reverse withstand voltage structure 12 is provided with a first deep FLR 13 on an inner peripheral side, a second shallow FLR 14 on an external peripheral side, and an insulation film 18 for covering a surface between a plurality of the first and second FLRs which are provided on the surface layer, and a conductive field plate 17 contacting with the surfaces of the plurality of FLRs 13, 14 extends to the surface of the insulation film 18 positioned between the plurality of FLRs 13, 14. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
