发明名称 PAD STRUCTURE FOR MULTI-LAYER WIRING AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a pad structure for multi-layer wiring and its manufacturing method for suppressing occurrence of bad electrical contact and probe breakage when the probe is brought into contact with a pad. SOLUTION: A semiconductor substrate 1 on which a first wiring 2 is formed is overlaid with a first inter-layer insulating film 3, a first contact hole 6, a W metal thin film 7 for improving adhesiveness between a second wiring 11 and the first inter-layer insulating film 3, a plating metal thin film 8 for forming the second wiring 11, the second wiring 11, a second inter-layer insulating film 12, a second contact hole 13, a W metal thin film 14 for improving adhesiveness between a third wiring 16 and the second inter-layer insulating film 12, a plating metal thin film 15 for forming the third wiring 16 and the third wiring 16. Further, the surface of a pad center 17 is flat, and a pad end 18 is curved toward downside, in the pad structure for multi-layer wiring. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009188228(A) 申请公布日期 2009.08.20
申请号 JP20080027324 申请日期 2008.02.07
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 SUGITANI SUEHIRO;NISHIMURA KAZUMI;ONODERA KIYOMITSU
分类号 H01L21/3205;H01L21/3065;H01L21/60;H01L21/768;H01L21/822;H01L23/52;H01L23/522;H01L27/04 主分类号 H01L21/3205
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