SEMICONDUCTOR DEVICE STRUCTURES AND RELATED PROCESSES
摘要
Improved highly reliable power RFP structures and fabrication and operation processes. The structure includes plurality of localized dopant concentrated zones beneath the trenches of RFPs, either floating or extending and merging with the body layer of the MOSFET or connecting with the source layer through a region of vertical doped region. This local dopant zone decreases the minority carrier injection efficiency of the body diode of the device and alters the electric field distribution during the body diode reverse recovery.
申请公布号
WO2009102684(A2)
申请公布日期
2009.08.20
申请号
WO2009US33631
申请日期
2009.02.10
申请人
MAXPOWER SEMICONDUCTOR INC.;ZENG, JUN;DARWISH, MOHAMED, N.