MIS FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

Disclosed is a MISFET or the like wherein the controllable range of the work function can be enlarged when a nitride or silicide of a group IV transition metal is used as a metal gate material. A MISFET (10) has a laminated structure including a gate electrode (11) and a gate insulating film (12). The gate electrode (11) is composed of a conductive film containing a group IV transition metal. At least a side of the gate insulating film (12) which is in contact with the gate electrode (11) is composed of a metal oxide which is not reduced by a group IV transition metal. An interface layer (13) between the gate electrode (11) and the gate insulating film (12) contains a group IV transition metal and oxygen. The conductive film containing a group IV transition metal is, for example, composed of a nitride or oxide of a group IV transition metal. In this connection, all the group IV transition metals are the same as the one contained in the gate electrode (11). Examples of the group IV transition metal may include Ti, Zr and Hf.