| 摘要 |
<p>A method for forming a pattern, a method and an apparatus for manufacturing a semiconductor device are provided to reduce a manufacturing cost of a semiconductor device and to simplify a process by forming a fine pattern without use of a hard mask. In a process(201) for forming a first pattern, a first pattern is formed by coating, exposing, and developing a chemically amplified resist including an acid generating agent. In a process(202) for giving solvent tolerance and developing solution tolerance, the first pattern has solvent tolerance and developing solution tolerance by contacting an alkaline solution or an alkaline gas in the first pattern. In a process(203) for forming a second pattern, a second pattern is formed by coating, exposing, and developing a chemically amplified resist including an acid generating agent. The process for giving the solvent tolerance and the developing solution tolerance includes a process for irradiating an ultraviolet ray. The alkaline solution or the alkaline gas includes an amine-based material. A heating process(202b) is included between the process for giving the solvent tolerance and the developing solution tolerance and the process for forming the second pattern.</p> |
