| 摘要 |
PROBLEM TO BE SOLVED: To provide a flash memory capable of being adapted to miniaturization to 30 nm or smaller. SOLUTION: Assuming that the minimum fabrication dimension of a memory cell part that is connected to a substrate 101 and formed of a fin-structured bit line having a spacer insulating film 116 at its upper portion is F, two independently writable/erasable bit lines make a pair to be arranged at pitch 4F to form the memory cell part, and a memory insulating film is formed so as to cover the upper portion of the pair of fins. COPYRIGHT: (C)2009,JPO&INPIT
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