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发明名称
Halbleiterelement mit einem Metallisierungsschichtstapel mit kleinem epsilon mit erhöhter Widerstandsfähigkeit gegen Elektromigration und Verfahren zum Bilden des Halbleiterelements
摘要
申请公布号
DE102004042168(B4)
申请公布日期
2009.08.20
申请号
DE20041042168
申请日期
2004.08.31
申请人
ADVANCED MICRO DEVICES INC.
发明人
STRECK, CHRISTOF;RUELKE, HARTMUT;KIENE, MICHAEL
分类号
H01L21/768;H01L23/522
主分类号
H01L21/768
代理机构
代理人
主权项
地址
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