| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photosensitive resin composition which can be cured at a low temperature of ≤200°C after patterning by photolithography, excels in chemical resistance and mechanical characteristics (a degree of elongation of ≥6%), has a low stress (≤35 MPa), a low shrinkage ratio (≤25%) and a low dielectric constant (≤3.2), and is suitable for a rewiring layer and for a buffer coat of an LSI chip capable of utilizing γ-BL as a solvent. <P>SOLUTION: The photosensitive resin composition includes (I) 100 parts by mass of a polyimide having a structure formed by condensing an alicyclic tetracarboxylic acid dianhydride, a cyclic aliphatic diamine and a chain aliphatic diamine, (II) 20-200 parts by mass of a polyfunctional photopolymerizable monomer having trifunctionality or higher, and (III) 0.02-40 parts by mass of a photopolymerization initiator. <P>COPYRIGHT: (C)2009,JPO&INPIT |
