发明名称 Memory data detecting apparatus and method for controlling reference voltage based on error in stored data
摘要 Example embodiments may relate to a method and an apparatus for reading data stored in a memory, for example, providing a method and an apparatus for controlling a reference voltage based on an error of the stored data. Example embodiments may provide a memory data detecting apparatus including a first voltage comparator to compare a threshold voltage of a memory cell with a first reference voltage, a first data determiner to determine a value of at least one data bit stored in the memory cell according to a result of the comparison, an error verifier to verify whether an error occurs in the determined value, a reference voltage determiner to determine a second reference voltage that is lower than the first reference voltage based on a result of the verification, and a second data determiner to re-determine the value of the data based on the determined second reference voltage.
申请公布号 US2009207671(A1) 申请公布日期 2009.08.20
申请号 US20080216745 申请日期 2008.07.10
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YU DONG HUN;CHO KYOUNG LAE;CHAE DONG HYUK;KONG JUN JIN;KIM JAE HONG;SONG SEUNG-HWAN
分类号 G11C7/00;G11C29/04 主分类号 G11C7/00
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