| 摘要 |
A method for analyzing Integrated circuit (IC) devices is provided. The method comprises the following steps: dividing an IC device into n working units, wherein each working unit causes a corresponding current dissipation; selecting n operation parameters, wherein each of the operation parameters variably corresponds to the current dissipation of each working unit; selecting m sets of the operation parameters and separately operating the IC device under the m sets of the operation parameters, wherein m is not smaller than n, and obtaining the total current dissipations of the IC device; computering m sets of current dissipation data of the working units corresponding to the m sets of operation parameters by using the total current dissipations; computering a basic current dissipation of the IC device by using the total current dissipations of the IC device and the obtained corresponding current dissipation data set of the working units; and determining the defective working units by comparing the obtained data with the standard data, respectively.
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