| 摘要 |
A nonvolatile memory device which contributes to improvement of electrical erase characteristics and a method of manufacturing the same are provided. The nonvolatile memory device includes a semiconductor substrate, a gate electrode formed on the semiconductor substrate, a diffusing layer electrode formed adjacent to the gate electrode on the semiconductor substrate; a charge accumulating layer formed on a lateral side of the gate electrode and retaining injected electrons, and an LDD region formed below the diffusing layer electrode. The charge accumulating layer is formed on only the lateral side of the gate electrode and does not extend along the LDD region.
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