| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an exposure mask and a pattern forming method for improving the light intensity distribution of a two-dimensional pattern and forming a fine resist pattern. <P>SOLUTION: The exposure mask 10 has a dimension of a limit resolution or higher of an exposure light, and is provided with: a hole pattern 1 comprising transparent regions repetitively disposed in the orthogonal X and Y directions at a regular pitch (e.g., 140-180 nm); a peripheral regions 2a, disposed between two hole patterns 1 adjacent to each other in the X and Y directions, and comprising a halftone phase shift region having a transmittance of 2-20% for reversing the phase of incident light; and a peripheral region 2b, comprising a light shielding region disposed in between two hole patterns 1 which are obliquely adjacent to each other at an angle of 45° with respect to the X and Y directions. The exposure mask 10 is irradiated with an azimuthal polarization light obtained from a secondary light source constituting an annular zone illumination 20 and having the polarization direction perpendicular to the radial direction of the secondary light source. <P>COPYRIGHT: (C)2009,JPO&INPIT |
