METHOD FOR MANUFACTURING Ge-Cr ALLOY SPUTTERING TARGET

摘要

PROBLEM TO BE SOLVED: To provide a Ge-Cr alloy sputtering target and a method of manufacturing it, which prevent unevenness in film forming speed of a GeCrN series layer film-formed by reactive sputtering as an intermediate layer between a recording layer and a protection layer of a phase change optical disk and in the film composition and can increase product yields.

SOLUTION: The Ge-Cr alloy sputtering target containing 5-50 at.% of Cr is characterized by having a relative density of 95% or higher. The method for manufacturing the Ge-Cr alloy sputtering target is characterized by uniformly dispersing and mixing a Cr powder of 75 μm or less size after flat sieving and a Ge powder of 250 μm or less size after sieving, the Ge powder having a BET specific surface area of 0.4 m2/g or less, and sintering the mixture.

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