| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an infrared sensor with a simple structure, which suppresses variations in semiconductor characteristics of each element and prevents the thermoelectric conversion efficiency from lowering due to the variations in the semiconductor characteristics. <P>SOLUTION: The infrared sensor S includes: a substrate 10 with an insulating layer 11; a thermoelectric transducer 20 disposed on the substrate 10 through the insulating layer 11; and an infrared absorbing layer 30 disposed on the thermoelectric transducer 20. The thermoelectric transducer 20 includes at least one single element 25 which includes a heated surface specified as a one-side surface and a cooled surface specified as an opposite-side surface, and generates electricity in accordance with a temperature difference between the heated surface and the cooled surface. The single element 25 includes: a sintered body cell 21 made of a composite metal oxide; a pair of electrodes 22, 23 formed on the heated surface and the cooled surface of the sintered body cell 21; and a lead wire 24 for electrically connecting the electrode 22 on the heated surface side to the electrode 23 on the cooled surface side in series. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
